Name: K40E06 60V 40A N-CHANNEL MOSFET
SKU: HXH392941910
Availability: InStock

Description
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The K40E06 is a high-performance N-channel power MOSFET designed for efficient power management in industrial and automotive applications. With a maximum drain-source voltage of 60V and a continuous drain current of 40A, it offers low on-resistance (RDS(ON)) of 10.4m at VGS = 10V, ensuring minimal power loss and excellent thermal performance. This makes it ideal for applications such as motor drives, power supplies, and switching regulators. The device is available in a TO-220 package, facilitating easy integration into various designs.

Features:

60V, 40A, RDS(ON) = 10.4m @ VGS = 10V
Low gate charge (Qg) of 23nC @ VGS = 10V
High input capacitance (Ciss) of 1700pF @ VDS = 30V
Fast reverse recovery time (trr) of 46ns
RoHS compliant
TO-220 package

Specifications:

Description	Value
Drain-Source Voltage (VDS)	60 V
Gate-Source Voltage (VGS)	20 V
Continuous Drain Current (ID)	40 A
Pulsed Drain Current (IDM)	125 A
Power Dissipation (PD)	67 W
Thermal Resistance, Junction-to-Case (RJC)	1.84 C/W
Thermal Resistance, Junction-to-Ambient (RJA)	83.3 C/W
Gate Threshold Voltage (VGS(th))	2.0 4.0 V
Zero Gate Voltage Drain Current (IDSS)	1 A
Input Capacitance (Ciss)	1700 pF
Total Gate Charge (Qg)	23 nC
Reverse Recovery Time (trr)	46 ns
Reverse Recovery Charge (Qrr)	62 nC
Operating Junction Temperature (Tj)	-55 to 150 C
Package	TO-220